Silicon Carbide and Related Materials, Proceedings of the fifth conference, 1-3 November 1993, Washington DC, USA

Silicon Carbide and Related Materials, Proceedings of the fifth conference, 1-3 November 1993, Washington DC, USA

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USA companies working in this area include Westinghouse. This material is being investigated primarily in the USA, Japan and Russia alongside that into wide-gap compounds which feature similar characteristics. Applications include high temperature ultra-violet lasers, photodiodes, photodetectors, blue LEDs, high power microwave applications in radar and transmitter devices Special sale to delegates 200 @ 35 Previous volumes in series published by Springer Leading workers in field include Pavlidis (MIT) and Choyke (Pittsburgh, Dept Phys) Feng author is also presenting paper Research in this area is expandingThe microstrip line width is 465 urn. The vertical devices consisted of a gridded top ... Schematic view of lateral PC switch design with simple switching gap of length L. The overall device length is 1 cm. Gridded top electrode o-H SiC 3.


Title:Silicon Carbide and Related Materials, Proceedings of the fifth conference, 1-3 November 1993, Washington DC, USA
Author: Spencer
Publisher:Taylor & Francis - 1994-06-29
ISBN-13:

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